Electrochemical deposition of Fe-S-O thin films

被引：9

作者：

Yang, Kai ^{[1
]}

Kawai, Shoichi ^{[2
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] DENSO CORP, Res Labs, Nisshin, Aichi 4700111, Japan

来源：

THIN SOLID FILMS | 2014年 / 573卷

关键词：

Iron sulfide; Iron oxide; Electrochemical deposition; Heterojunction; IRON PYRITE; SULFIDATION;

D O I：

10.1016/j.tsf.2014.10.072

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

FeSxOy thin films were fabricated by the electrochemical deposition method on indium-tin-oxide (ITO)-coated glass substrates. FeSxOy is an environment-friendly material and is expected to have properties suitable for photovoltaics. The deposition solution contained FeSO4 and Na2S2O3. At 40 degrees C, a compact black film 0.5 mu m in thickness with Fe: S:O composition 1:1:1 was deposited in 5 min on ITO substrate from a solution containing 40mMFeSO(4) and 100 mM Na2S2O3 at a pH5.6 (inherent). In the photoelectrochemical measurement, the deposited FeSxOy film showed p-type conduction and photoconductivity. A ZnO/FeSxOy heterostructure was fabricated, and rectification properties were confirmed. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1 / 5

页数：5

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