Near-field and far-field dynamics of (Al,ln)GaN laser diodes -: art. no. 161112

被引：26

作者：

Schwarz, UT ^{[1
]}

Pindl, M

Wegscheider, W

Eichler, C

Scholz, F

Furitsch, M

Leber, A

Miller, S

Lell, A

Härle, V

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-73040 Regensburg, Germany

[2] Univ Ulm, Optoelect Dept, D-89069 Ulm, Germany

[3] Osram Opto Semicond GmbH, D-93049 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期

关键词：

D O I：

10.1063/1.1900304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.© 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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