106 years extrapolated hole storage time in GaSb/AlAs quantum dots

被引：96

作者：

Marent, A. ^{[1
]}

Geller, M. ^{[1
]}

Schliwa, A. ^{[1
]}

Feise, D. ^{[1
]}

Poetschke, K. ^{[1
]}

Bimberg, D. ^{[1
]}

Akcay, N. ^{[2
]}

Oncan, N. ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 24期

关键词：

D O I：

10.1063/1.2824884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermal activation energy of 710 meV for hole emission from InAs/GaAs quantum dots (QDs) across an Al(0.9)Ga(0.1)As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6 s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic random access memory (DRAM) refresh time. The dependence of the hole storage time in different III-V QDs on their localization energy is determined and the localization energies in GaSb-based QDs are calculated using eight-band k center dot p theory. A storage time of about 106 years in GaSb/AlAs QDs is extrapolated, sufficient for a QD-based nonvolatile (flash) memory. (c) 2007 American Institute of Physics.

引用

页数：3

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