A 3.8-mW 2.5-GHz dual-modulus prescaler in a 0.8 μm silicon bipolar production technology

被引：0

作者：

Knapp, H ^{[1
]}

Wilhelm, W ^{[1
]}

Rest, M ^{[1
]}

Trost, HP ^{[1
]}

机构：

[1] Siemens AG, Corp Technol, D-81730 Munich, Germany

来源：

1998 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN - PROCEEDINGS | 1998年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a dual-modulus divided by 128/divided by 129 prescaler operating up to 2.5 GHz. It consumes only 3.8 mW from a 2.3 V supply when driving an 8 pF capacitive load. The circuit is operational with supplies ranging from 2 V to over 7 V. With a 2 V supply it consumes only 1.38 mA while still operating up to 2 GHz. The circuit is manufactured in a standard silicon bipolar production process (Siemens B6HF). This 25 GHz-f(T) double-polysilicon technology uses 0.8 mu m lithography and LOGOS isolation. The chip is mounted in a 6-pin SOT363 SMD package.

引用

页码：20 / 23

页数：4