A 0.12-0.4 V, Versatile 3-Transistor CMOS Voltage Reference for Ultra-Low Power Systems

被引:51
作者
de Oliveira, Arthur Campos [1 ]
Cordova, David [2 ]
Klimach, Hamilton [1 ]
Bampi, Sergio [1 ]
机构
[1] Univ Fed Rio Grande do Sul, Grad Program Microelect, BR-91509900 Porto Alegre, RS, Brazil
[2] Univ Bordeaux, IMS Lab, F-33405 Bordeaux, France
关键词
Subthreshold; voltage reference; ultra low power; ultra low voltage; 3; transistor; PPM/DEGREES-C; SENSOR NODES; NANOPOWER; PICOWATT;
D O I
10.1109/TCSI.2018.2859341
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose an ultra-low power compact 3-transistor voltage reference capable of operating at ultra-low supply voltages. The proposed circuit is based on the self-cascode MOSFET (SCM), which provides a reference voltage proportional to the threshold voltage (V-T) difference of the two NMOS transistors that compose it. Reverse short-channel and narrow-width effects are explored to obtain such V-T difference while using the same type of transistor. Ultra-low power operation and low line sensitivity is achieved by biasing the SCM with a zero-V-T (native) transistor, also leading to an area efficient design. To show its versatility, three versions of the proposed circuit were fabricated in a standard 0.13-mu m CMOS process. Measurement performed over five samples showed an average temperature coefficient of 150-1500 ppm/degrees C. Minimum supply voltages of 0.12-0.4 V was observed while providing reference voltages around tens of mV. The proposed circuits consume 0.33-50 pW at room temperature and minimum supply voltage. The occupied area for any version is less than 0.0012 mm(2).
引用
收藏
页码:3790 / 3799
页数:10
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