MoS2 and semiconductors in the flatland

被引：182

作者：

Yazyev, Oleg V. ^{[1
]}

Kis, Andras ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Elect Engn, CH-1015 Lausanne, Switzerland

来源：

MATERIALS TODAY | 2015年 / 18卷 / 01期

基金：

芬兰科学院; 瑞士国家科学基金会; 欧洲研究理事会;

关键词：

THIN-FILM TRANSISTORS; VAPOR-PHASE GROWTH; SINGLE-LAYER; HIGH-PERFORMANCE; LARGE-AREA; ELECTRONIC-PROPERTIES; MONOLAYER MOS2; BAND-GAP; VALLEY POLARIZATION; INTEGRATED-CIRCUITS;

D O I：

10.1016/j.mattod.2014.07.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fascinating properties of graphene, the first two-dimensional (2D) material, and the accompanying strong activity in the research community have sparked a renewed interest in related layered crystalline materials with unique electronic and optical properties. Their superb mechanical properties, optical transparency, direct band gap and large degree of electrostatic control due to their atomic scale thickness make them interesting inorganic nanosystems for a wide variety of applications. In this review we will present a short history of research in the synthesis, band properties and potential applications of 2D semiconductors with a particular emphasis on MoS2, the prototypical and best-studied material from this family.

引用

页码：20 / 30

页数：11

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