Electrical-Thermal Co-Simulation for power redistribution layers of Interposer with Through-Silicon Vias

被引：0
|
作者：
Ren, Xiaoli [1 ]
Xu, Cheng [1 ]
Ping, Ye [1 ]
Wang, Zhi [1 ]
Pang, Cheng [1 ]
Yu, Daquan [1 ]
机构：
[1] Natl Ctr Adv Packaging, Wuxi 214315, Peoples R China
来源：
2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2013年
关键词：
interposer; RDL; PDN; electrical-thermal co-simulation; IR drop; tenperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an TSV (Through-Silicon Via) Interposer with signal distribution networks (SDN) and power distribution networks (PDN) is proposed. And the temperature-dependent electrical resistivity of conductors and the Joule heating effect of the interposer are analyzed using the electrical-thermal co-simulation method. The simulation results show that the temperature effect on IR (voltage) drop is significant and can not be neglected.
引用
收藏
页码：492 / 497
页数：6
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