Semi-Analytical Method for Determination of Air Bridge Interconnect for GaAs-Based p-i-n Diode

被引：4
|
作者：
Zhang, Ao [1 ,2 ]
Gao, Jianjun [3 ]
机构：
[1] Nantong Univ, Sch Transportat & Civil Engn, Nantong 226019, Peoples R China
[2] East China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[3] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Atmospheric modeling; Integrated circuit modeling; P-i-n diodes; Bridge circuits; Inductance; Resistance; Equivalent circuits; Diode; equivalent circuit model; GaAs; p-i-n; MICROWAVE;
D O I：
10.1109/TED.2022.3190239
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-analytical method for the determination of extrinsic and intrinsic model parameters for GaAs-based p-i-n diode is presented in this article. The main advantage is that the air-bridge interconnect inductance is regarded as an independent element and can be distinguished from the feedline effect. The detail model parameters extraction procedure is proposed, and the corresponding closed-form expressions are derived. Good agreement is obtained between the simulated and measured S-parameters up to 110 GHz to verify the validity of the approach.
引用
收藏
页码：4848 / 4852
页数：5
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