On the origin of Si nanocrystal formation in a Si suboxide matrix

被引：43

作者：

Yu, Decai ^{[1
]}

Lee, Sangheon ^{[1
]}

Hwang, Gyeong S. ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2800268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined mechanisms underlying Si nanocrystal formation in Si-rich SiO2 using a combination of quantum mechanical and Monte Carlo (MC) simulations. We find that this process is mainly driven by suboxide penalty arising from incomplete O coordination, with a minor contribution of strain, and it is primarily controlled by O diffusion rather than excess Si diffusion and agglomeration. The overall behavior of Si cluster growth from our MC simulations based on these fundamental findings agrees well with experiments.

引用

页数：6

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