Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

被引:248
作者
Chen, Ke [1 ]
Song, Bai [1 ,11 ,12 ]
Ravichandran, Navaneetha K. [2 ]
Zheng, Qiye [3 ,4 ,13 ,14 ]
Chen, Xi [5 ,15 ]
Lee, Hwijong [5 ]
Sun, Haoran [6 ,7 ]
Li, Sheng [8 ]
Gamage, Geethal Amila Udalamatta Gamage [6 ,7 ]
Tian, Fei [6 ,7 ]
Ding, Zhiwei [1 ]
Song, Qichen [1 ]
Rai, Akash [3 ,4 ]
Wu, Hanlin [8 ]
Koirala, Pawan [8 ]
Schmidt, Aaron J. [1 ]
Watanabe, Kenji [9 ]
Lv, Bing [8 ]
Ren, Zhifeng [6 ,7 ]
Shi, Li [5 ,10 ]
Cahill, David G. [3 ,4 ]
Taniguchi, Takashi [9 ]
Broido, David [2 ]
Chen, Gang [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[4] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[5] Univ Texas Austin, Texas Mat Inst, Mat Sci & Engn Program, Austin, TX 78712 USA
[6] Univ Houston, Dept Phys, Houston, TX 77204 USA
[7] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[8] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[9] Natl Inst Mat Sci, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan
[10] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA
[11] Peking Univ, Dept Energy & Resources Engn, Beijing 100871, Peoples R China
[12] Peking Univ, Beijing Innovat Ctr Engn Sci & Adv Technol, Beijing 100871, Peoples R China
[13] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[14] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[15] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
基金
美国国家科学基金会; 日本学术振兴会;
关键词
SINGLE-CRYSTAL; HIGH-PRESSURE; PHOSPHIDE; SPECTRA;
D O I
10.1126/science.aaz6149
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Materials with high thermal conductivity (kappa) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured greater than 1600 watts per meter-kelvin at room temperature in samples with enriched B-10 or B-11. In comparison, we found that the isotope enhancement of kappa is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh kappa in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.
引用
收藏
页码:555 / +
页数:58
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