Electrical properties of ErSi2 nanowires formed on Si substrates

被引：1

作者：

Yokoyama, Satoshi ^{[1
]}

Katayama, Yusuke ^{[1
]}

Kobayashi, Tomohiro ^{[2
]}

Meguro, Takashi ^{[2
]}

Zhao, Xinwei ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期

关键词：

ErSi2; nanowires; cross-sectional structure; resistivity;

D O I：

10.1016/j.mee.2008.01.060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ErSi2 nanowires (NWs) were formed on Si (1 1 0) substrates by a self-assembly process. The wires were highly parallel and grew along the Si < 1 1 0 > crystal direction. There were two types of ErSi2 NWs on the same Si (1 1 0) surface; these were formed during the same annealing process. One consisted of very wide type wires, having widths of 100 nm, and the other of narrow wires, with widths of less than 50 nm. Current-voltage measurements were carried out for the two types of ErSi2 NWs. The deference in resistivity of the wide and narrow wires is discussed based on the structural investigation. (C) 2008 Elsevier B.V. All rights reserved.

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页码：1253 / 1256

页数：4

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