A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors

被引：11

作者：

Desai, Nachiket ^{[1
]}

Then, Han Wui ^{[1
]}

Yu, Jingshu ^{[1
]}

Krishnamurthy, Harish K. ^{[1
]}

Lambert, William J. ^{[2
]}

Butzen, Nicolas ^{[1
]}

Weng, Sheldon ^{[1
]}

Schaef, Christopher ^{[1
]}

Radhakrishnan, Kaladhar ^{[2
]}

Ravichandran, Krishnan ^{[1
]}

Tschanz, James W. ^{[1
]}

De, Vivek ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

[2] Intel Corp, Chandler, AZ 85226 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2022年 / 57卷 / 04期

关键词：

Logic gates; Switches; Integrated circuits; Gate drivers; Silicon; Clamps; Switching circuits; Buck converters; gallium nitride; GaN power delivery; low-voltage (LV) GaN; system-in-package;

D O I：

10.1109/JSSC.2022.3141779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A buck converter using a low-voltage GaN nMOS power transistor with 5-10x superior switching figure-of-merit over Si laterally-diffused MOS (LDMOS) and stacked CMOS at 5 V has been employed to build a high-frequency (3-20 MHz), high-density (9 A/mm(2)) buck converter for high-performance-compute applications. The GaN-based converter is co-packaged with a CMOS Companion Die on a 4 mm x 4 mm package and employs on-die gate clamps to minimize the impact of package parasitics for high efficiency. For 5-V input to 1-V output conversion, the converter achieves 94.2% peak efficiency at 3.1-MHz switching frequency with a 40-nH inductor, and >80% peak efficiency at 20 MHz with an air-core inductor.

引用

页码：1090 / 1099

页数：10

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