Low-power 2-D fully integrated CMOS fluxgate magnetometer

被引:37
作者
Drljaca, PM [1 ]
Kejik, P
Vincent, F
Piguet, D
Popovic, RS
机构
[1] Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland
[2] ASULAB SA, Cent Res Labs, SwatchGrp, CH-2074 Marin, Switzerland
关键词
CMOS; compass; fluxgate; magnetic sensors; planar structure;
D O I
10.1109/JSEN.2004.840836
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a low-power, two-axis flux-gate magnetometer. The planar sensor is integrated in a standard CMOS process, which provides metal layers for the coils and electronics for the signal extraction and processing. The ferromagnetic core is placed diagonally above the four excitation coils by a compatible photolithographic post process, performed on a whole wafer. The sensor works using the single-core principle, with a modulation technique to lower the noise and the offset at the output. In contrast to traditional fluxgate approaches, the sensor features a high degree of integration and minimal power consumption at 2.5 V of supply voltage that makes it suitable for portable applications. A novel digital feedback principle is integrated to linearize the sensor characteristics and to extend the linear working range.
引用
收藏
页码:909 / 915
页数:7
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