Temperature driven p-n-p type conduction switching materials: current trends and future directions

被引:23
作者
Guin, Satya N. [1 ]
Biswas, Kanishka [1 ]
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Bangalore 560064, Karnataka, India
关键词
SILVER(I) CHALCOGENIDE HALIDES; HIGH THERMOELECTRIC FIGURE; ELECTRICAL-PROPERTIES; PHASE-TRANSITIONS; MIXED CONDUCTOR; PERFORMANCE; AG10TE4BR3; AG5TE2CL1-XBRX; NANOCRYSTALS; CRYSTAL;
D O I
10.1039/c4cp06088a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Modern technological inventions have been going through a "renaissance'' period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for advanced technologies. In modern technologies, inorganic semiconductors are the leading materials which are extensively used for different applications. In the current perspective, we present discussion on an important class of materials that show fascinating p-n-p type conduction switching, which can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change. We highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p-n-p type conduction switching. Finally, we point out the major challenges and opportunities in this field.
引用
收藏
页码:10316 / 10325
页数:10
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