Effect of surface oxide layer on mechanical properties of single crystalline silicon

被引:0
作者
Miyamoto, Kenji [1 ]
Sugano, Koji [1 ]
Tsuchiya, Toshiyuki [1 ]
Tabata, Osamu [1 ]
机构
[1] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
来源
MICROELECTROMECHANICAL SYSTEMS - MATERIALS AND DEVICES | 2008年 / 1052卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the tensile testing of single crystal silicon (SCS), whose specimen surface was intentionally oxidized, and the effect of the oxide thickness on the mechanical properties in order to investigate the fatigue fracture mechanism under cyclic loading. SCS specimens were fabricated from silicon-on-insulator (SOI) wafer with 3-mu m -thick device layer and oxide layer were grown to the specimens using thermal dry oxidation at 1100 degrees C. The specimen test part was 120 or 600 mu m long and 4 mu m wide. Quasi-static tensile testing of SCS specimen without oxide layer, with 100-nm-thick oxide, and with 200-mn-thick oxide was performed. As the results, the fracture origin location changed from the surface of the specimen of SCS without oxide to inside of silicon of oxidized specimen. This change may be caused by the smoothing of the surface and formation of oxide precipitation defects in silicon during oxidation. The estimated radius of the defects in specimen with 100 -nm-thick oxide and with 200-nm-thick oxide was 26 nm and 45 nm, respectively, which is well agreed with the fracture-initiating crack sizes calculated from the measured strengths.
引用
收藏
页码:53 / 58
页数:6
相关论文
共 8 条
[1]   OXYGEN PRECIPITATION IN SILICON [J].
BORGHESI, A ;
PIVAC, B ;
SASSELLA, A ;
STELLA, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4169-4244
[2]   INTRINSIC STRESS AND STRESS GRADIENTS AT THE SIO2/SI INTERFACE IN STRUCTURES PREPARED BY THERMAL-OXIDATION OF SI AND SUBJECTED TO RAPID THERMAL ANNEALING [J].
FITCH, JT ;
BJORKMAN, CH ;
LUCOVSKY, G ;
POLLAK, FH ;
YIN, X .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :775-781
[3]  
Kahn H, 2002, SCIENCE, V298, P1215
[4]   AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].
LIVINGSTON, FM ;
MESSOLORAS, S ;
NEWMAN, RC ;
PIKE, BC ;
STEWART, RJ ;
BINNS, MJ ;
BROWN, WP ;
WILKES, JG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6253-6276
[5]   A reaction-layer mechanism for the delayed failure of micron-scale polycrystalline silicon structural films subjected to high-cycle fatigue loading [J].
Muhlstein, CL ;
Stach, EA ;
Ritchie, RO .
ACTA MATERIALIA, 2002, 50 (14) :3579-3595
[6]  
OROWAN E, 1948, REP PROG PHYS, V12, P183
[7]  
Yamaji Yusuke, 2007, 2007 20th IEEE International Conference on Micro Electro Mechanical Systems - MEMS '07, P267
[8]   Tensile testing of SiO2 and Si3N4 films carried out on a silicon chip [J].
Yoshioka, T ;
Ando, T ;
Shikida, M ;
Sato, K .
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 82 (1-3) :291-296