Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs

被引：8

作者：

Chen, Yongfei ^{[1
,2
]}

Che, Jiamang ^{[3
,4
]}

Chu, Chunshuang ^{[1
,2
]}

Shao, Hua ^{[1
,2
]}

Zhang, Yonghui ^{[1
,2
]}

Zhang, Zi-Hui ^{[1
,2
]}

机构：

[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China

[2] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300401, Peoples R China

[3] Hebei Petr Univ Technol, Chengde 067000, Peoples R China

[4] Hebei Instrument & Meter Engn Technol Res Ctr, Chengde 067000, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2022年 / 34卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Light emitting diodes; Wide band gap semiconductors; Aluminum gallium nitride; Quantum well devices; Conductivity; Optical variables measurement; Energy barrier; DUV LEDs; EQE; energy barrier; current spreading effect; LIGHT-EMITTING-DIODES; CURRENT BLOCKING LAYER; EFFICIENCY;

D O I：

10.1109/LPT.2022.3200460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, by sandwiching a p-AlGaN layer into the n-AlGaN layer, we generate an energy barrier in the n-AlGaN layer to improve the current spreading effect of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). The abrupt energy barrier can balance the resistivity in the n-AlGaN layer, and this leads to the better lateral current distribution in the p-type hole injection layer. Numerical and experimental results show that the homogenized current distribution enables the enhanced external quantum efficiency (EQE) for the proposed DUV LED. In addition, the better conductivity modulation arising from the more homogenized current distribution decreases the forward voltage and suppresses the self-heating effect.

引用

页码：1065 / 1068

页数：4

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