Phase Transformation through Metastable Structures in Atomically Controlled Se/Sb MultiLayers

被引:11
作者
Baeck, Ju Heyuck [1 ]
Kim, Tae Hyeon [1 ]
Choi, Hye Jin [1 ]
Jeong, Kwang Ho [1 ]
Cho, Mann-Ho [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
关键词
CRYSTAL STRUCTURE; ARSENIC SELENIDE; STATES; NANOWIRES; PHOTOEMISSION; FILMS; SE;
D O I
10.1021/jp202433s
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Multilayer films composed of individual layers of [Sb(8.84 angstrom)/Se(12.6 angstrom)] (Sb4Se6), [Sb(8.84 angstrom)/Se(7.2 angstrom)]-(Sb4Se4), and [Sb(15.4 angstrom)/Se(7.2 angstrom)] (Sb6Se4) were synthesized using effusion cells controlled at the subatomic scale. After an annealing process, the Sb4Se6 multilayered film with an Sb2Se3 orthorhombic structure had a high resistance and a clean valence band edge similar to that for a band shape of a semiconductor, whereas the Sb6Se4 film with an Sb rhombohedral structure and an Sb2Se3 orthorhombic structure had a low resistance and a band tail that originated from their metallic characteristics in the near Fermi level. In the case of Sb4Se4, a metastable Sb4Se4 monoclinic structure was induced at an annealing temperature of 200 degrees C because of the unstable, local, and anisotropic distribution of each element in the vertical direction of multilayer films with a specific stoichiometry. Moreover, the nonbonding states originating from a band-gap state were generated in the film with a metastable structure. When the annealing process was conducted at 256 degrees C, the linear diffusion of elements in the film induced the most stable crystal structure with a stable stoichiometry. That is, the multilayered Sb4Se4 film underwent a steplike resistance change through a two-level phase change process. The findings indicate that a multilayered system with an atomically controlled thickness can be utilized to control the electrical resistance, metastable phase formation, and the valence band structure in an Sb-Se alloy system.
引用
收藏
页码:13462 / 13470
页数:9
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