Design and Fabrication of Wafer Level Dual-Band Thin Film Bulk Acoustic Resonator Filters

被引：0

作者：

Chang, Wei-Tsai ^{[2
]}

Chen, Ying-Chung ^{[2
]}

Cheng, Chien-Chuan ^{[1
]}

Kao, Kuo-Sheng ^{[3
]}

Lin, Re-Ching ^{[4
]}

Li, Jia-Ming ^{[2
]}

机构：

[1] De Lin Inst Technol, Dept Elect Engn, Taipei, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

[3] Shu Te Univ, Dept Comp & Commun, Kaohsiung, Taiwan

[4] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Tainan, Taiwan

来源：

ADVANCED DESIGN TECHNOLOGY, PTS 1-3 | 2011年 / 308-310卷

关键词：

ZnO; wafer level; dual-mode TFBAR; filter; ZNO;

D O I：

10.4028/www.scientific.net/AMR.308-310.201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.

引用

页码：201 / +

页数：2

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