Defects in Semiconductors

被引：41

作者：

McCluskey, Matthew D. ^{[1
]}

Janotti, Anderson ^{[2
]}

机构：

[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/5.0012677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：3

共 57 条

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (12)

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (02)

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JOURNAL OF APPLIED PHYSICS, 2019, 126 (21)

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (08)

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (01)

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (06)

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JOURNAL OF APPLIED PHYSICS, 2019, 126 (15)

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JOURNAL OF APPLIED PHYSICS, 2020, 127 (03)

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