Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain

被引:4
作者
Wu, Anquan [1 ]
Liang, Bin [1 ]
Chi, Yaqing [1 ]
Wu, Zhenyu [1 ]
机构
[1] Natl Univ Def Technol, Coll Comp, Changsha 410073, Peoples R China
来源
SYMMETRY-BASEL | 2020年 / 12卷 / 04期
基金
中国国家自然科学基金;
关键词
single-event transient (SET); pulse width; inverter chain; 28 nm bulk; single-event multiple transient (SEMT); heavy-ions;
D O I
10.3390/sym12040624
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.
引用
收藏
页数:11
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