Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging

被引：17

作者：

Sudharsanan, Rengarajan ^{[1
]}

Yuan, Ping ^{[1
]}

Boisvert, Joseph ^{[1
]}

McDonald, Paul ^{[1
]}

Isshiki, Takahiro ^{[1
]}

Mesropian, Shoghig ^{[1
]}

Labios, Ed ^{[1
]}

Salisbury, Michael ^{[2
]}

机构：

[1] Boeing Spectrolab Inc, 12500 Gladstone Ave, Sylmar, CA 91342 USA

[2] Boeing SVS Inc, Albuquerque, NM 87109 USA

来源：

LASER RADAR TECHNOLOGY AND APPLICATIONS XIII | 2008年 / 6950卷

关键词：

D O I：

10.1117/12.778278

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have designed, fabricated and characterized InGaAs/InP Geiger-mode avalanche photodiode (APD) 32 x 32 arrays optimized for operation at both 1.06 and 1.55 mu m wavelengths Single element devices with a thick multiplication layer thickness showed dark count rate as low as 60 kHz at a 3 V overbias, while photon detection efficiencies at a wavelength of 1.55 mu m exceed 30% at 2 V overbias. Back illuminated 32 x 32 detector arrays exhibited breakdown uniformity of greater than 97% and excellent dark current uniformity. Detector arrays were integrated with low-noise read-out integrated circuits for an imaging demonstration. 3D imaging was demonstrated using 1.06 micron detector arrays.

引用

页数：9

共 4 条

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