Single photon counting Geiger mode InGaAs(P)/InP avalanche photodiode arrays for 3D imaging

被引:17
作者
Sudharsanan, Rengarajan [1 ]
Yuan, Ping [1 ]
Boisvert, Joseph [1 ]
McDonald, Paul [1 ]
Isshiki, Takahiro [1 ]
Mesropian, Shoghig [1 ]
Labios, Ed [1 ]
Salisbury, Michael [2 ]
机构
[1] Boeing Spectrolab Inc, 12500 Gladstone Ave, Sylmar, CA 91342 USA
[2] Boeing SVS Inc, Albuquerque, NM 87109 USA
来源
LASER RADAR TECHNOLOGY AND APPLICATIONS XIII | 2008年 / 6950卷
关键词
D O I
10.1117/12.778278
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have designed, fabricated and characterized InGaAs/InP Geiger-mode avalanche photodiode (APD) 32 x 32 arrays optimized for operation at both 1.06 and 1.55 mu m wavelengths Single element devices with a thick multiplication layer thickness showed dark count rate as low as 60 kHz at a 3 V overbias, while photon detection efficiencies at a wavelength of 1.55 mu m exceed 30% at 2 V overbias. Back illuminated 32 x 32 detector arrays exhibited breakdown uniformity of greater than 97% and excellent dark current uniformity. Detector arrays were integrated with low-noise read-out integrated circuits for an imaging demonstration. 3D imaging was demonstrated using 1.06 micron detector arrays.
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页数:9
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