Structural and mechanical properties of tantalum thin films affected by nitrogen ion implantation

被引:9
作者
Ramezani, A. H. [1 ]
Hoseinzadeh, S. [2 ,3 ]
Ebrahiminejad, Zh [1 ]
机构
[1] Islamic Azad Univ, Dept Phys, West Tehran Branch, Tehran, Iran
[2] Univ Pretoria, Dept Mech & Aeronaut Engn, Ctr Asset Integr Management, Pretoria, South Africa
[3] Islamic Azad Univ, West Tehran Branch, Young Researchers & Elite Club, Tehran, Iran
来源
MODERN PHYSICS LETTERS B | 2020年 / 34卷 / 15期
关键词
Ion implantation; XRD; tantalum; AFM; friction coefficient; microhardness; RAY PHOTOELECTRON-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; REACTIVELY SPUTTERED TA; NITRIDE FORMATION; SEMICONDUCTOR; RESISTANCE; CATHODE; FUTURE;
D O I
10.1142/S0217984920501638
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tantalum bulk were implanted with nitrogen ions at different dose of 1 x 10(17) ions cm(2) to 10 x 10(17) ions/cm(2) and at a energy 30 keV. The implanted samples were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), microhardness testing, friction coefficient measurements and wear mechanism study. Scanning electron microscopy (SEM) images were used to analyze the friction of samples. The XRD results confirmed that the increasing dose affects the formation of the TaN phase. Based on AFM images, the morphology and surface roughness change proportionally to grain size after implantation. It was found that hardness increases as energy increases. From the friction coefficient measurement, this coefficient decreases as energy increases. For the un-implanted sample, the wear mechanism has abrasion, and with increasing the energy, it shifts to being flake and sticky.
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页数:13
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