Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

被引：243

作者：

DeRose, Christopher T. ^{[1
]}

Trotter, Douglas C. ^{[1
]}

Zortman, William A. ^{[1
]}

Starbuck, Andrew L. ^{[1
]}

Fisher, Moz ^{[2
]}

Watts, Michael R. ^{[3
]}

Davids, Paul S. ^{[1
]}

机构：

[1] Sandia Natl Lab Appl Microphoton Syst, Albuquerque, NM 87185 USA

[2] IQE Silicon Cpds St Mellons, Cardiff CF3 0LW, S Glam, Wales

[3] MIT, Elect Res Lab, Cambridge, MA 02139 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 25期

基金：

美国能源部;

关键词：

HIGH-PERFORMANCE; GE; SILICON; SI; PHOTODETECTORS; RECEIVER; MODEL;

D O I：

10.1364/OE.19.024897

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a compact 1.3 x 4 mu m(2) Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications. (C) 2011 Optical Society of America

引用

页码：24897 / 24904

页数：8

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