Graphene Magnetoresistance Device in van der Pauw Geometry

被引：46

作者：

Lu, Jianming

Zhang, Haijing

Shi, Wu

Wang, Zhe

Zheng, Yuan

Zhang, Ting

Wang, Ning

Tang, Zikang ^{[1
]}

Sheng, Ping

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

NANO LETTERS | 2011年 / 11卷 / 07期

关键词：

Graphene; extraordinary magnetoresistance; finite element simulations; magnetoresistance sensitivity; PERFORMANCE; LIMITS;

D O I：

10.1021/nl201538m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated extraordinary magnetoresistance (EMR) device, comprising a monolayer graphene with an embedded metallic disk, that exhibits large room temperature magnetoresistance (MR) enhancement of up to 55 000% at 9 T. Finite element simulations yield predictions in excellent agreement with the experiment and show possibility for even better performance. Simplicity, ease of implementation and high sensitivity of this device imply great potential for practical applications.

引用

页码：2973 / 2977

页数：5

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