Systematic row and zone axis STEM defect image simulations

被引:61
作者
Phillips, P. J. [2 ]
Mills, M. J. [2 ]
De Graef, M. [1 ]
机构
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
基金
美国国家科学基金会;
关键词
STEM; defects in solids; image simulation; electron diffraction; stacking fault; ELECTRON-MICROSCOPE; LATTICE DEFECTS; CONTRAST;
D O I
10.1080/14786435.2010.547526
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transmission electron microscopy (TEM) has been instrumental in advancing the field of crystalline defect analysis. Conventional TEM imaging techniques, such as bright field (BF), dark field (DF), and weak beam dark field (WBDF or g-3g) imaging, have been well-documented in the scientific literature, with simulation methods readily available for each. The present contribution highlights the use of a field-emission TEM, operated in scanning transmission electron microscopy mode, as a viable tool for defect analysis. Common techniques such as two-beam diffraction contrast and zone axis imaging are applied to defect analysis; both experimental and computational results are presented. Effects of experimental parameters such as camera length, beam divergence angle, and diffraction aperture placement are also discussed and illustrated by both experimental and computed micrographs of stacking faults.
引用
收藏
页码:2081 / 2101
页数:21
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