Structural changes during vapor-phase deposition of polycrystalline-PbI2 films

被引:48
作者
Schieber, M. [1 ,2 ]
Zamoshchik, N. [1 ]
Khakhan, O. [1 ]
Zuck, A. [1 ]
机构
[1] Hebrew Univ Jerusalem, Div Appl Phys, IL-91904 Jerusalem, Israel
[2] Real Time Radiog, IL-91487 Jerusalem, Israel
关键词
semiconducting lead compounds; physical vapor deposition; polycrystalline deposition;
D O I
10.1016/j.jcrysgro.2008.02.030
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Lead iodide (PbI2) polycrystalline thin films with [0 0 1] and [110] orientations have been grown using a physical vapor-deposition method on substrates coated with ITO or gold electrodes. The films orientation as function of the deposition conditions, such as substrate temperature and coating material, was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Four different types of structures of PbI2 films deposited on ITO were identified and named A, B, C and D, where each structure is stable in its own temperature range. Changes of structure during the growth process due to the temperature range change were demonstrated. Moreover, the dependence of the temperature range and film structure on substrate coating materials was found. The electrical properties and detector response correlation with film structure have been summarized. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3168 / 3173
页数:6
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