Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

被引：4

作者：

Eichfeld, Sarah M. ^{[1
]}

Won, Dongjin ^{[2
]}

Trumbull, Kathy ^{[1
]}

Labella, Michael ^{[1
]}

Weng, Xiaojun ^{[3
]}

Robinson, Joshua ^{[1
]}

Snyder, David ^{[1
]}

Redwing, Joan M. ^{[2
,3
]}

Paskova, Tanya ^{[4
]}

Udwary, Kevin ^{[4
]}

Mulholland, Greg ^{[4
]}

Preble, Ed ^{[4
]}

Evans, Keith R. ^{[4
]}

机构：

[1] Penn State Univ, Electroopt Ctr, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[4] Kyma Technol Inc, Raleigh, NC 27617 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

MOCVD; AlGaN/GaN; HEMT;

D O I：

10.1002/pssc.201001059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of growth temperature and Mg compensation doping on the structural and electrical properties of AlGaN/AlN/GaN high electron mobility transistor (HEMTs) structures grown on low threading dislocation density bulk GaN substrates by metalorganic chemical vapor deposition were investigated. The background electron concentration in the regrown GaN was found to decrease from 1.5x10(18) cm(-3) to 2x10(16) cm(-3) as the growth temperature was reduced from 1100 degrees C to 950 degrees C. A dual temperature process was then employed for growth of the GaN base layer and AlGaN/AlN/GaN top heterostructure in the HEMT along with Mg doping of the GaN base to compensate residual Si donors at the regrown interface. Using this approach, AlGaN/AlN/GaN HEMTs were produced that had a sheet carrier density as high as 1.1x10(13) cm(-3) with a room temperature mobility of 1600 cm(2)/Vs. The incorporation of a thin AlN layer at the regrown interface was found to reduce the sheet carrier density of the overall structure. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2053 / 2055

页数：3

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