First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide (vol 19, pg 6037, 2019)

被引：2

作者：

Jaeger, Richard C. ^{[1
]}

Chen, Jun ^{[1
]}

Suhling, Jeffrey C. ^{[1
]}

Fursin, Leonid ^{[2
]}

机构：

[1] Auburn Univ, Auburn, AL 36849 USA

[2] United Silicon Carbide Inc, Monmouth Jct, NJ 08852 USA

来源：

IEEE SENSORS JOURNAL | 2020年 / 20卷 / 14期

关键词：

Piezoresistance; Temperature measurement; Voltage measurement; MOS devices; Stress; Temperature sensors;

D O I：

10.1109/JSEN.2020.2982630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We recently realized that the basic piezoresistivity matrix for 4H-SiC in the above paper [1] was not correct [2], [3]. The matrix and subsequent results are corrected here, and the section and equation numbers utilized here correspond to those in the original paper [1].

引用

页码：8186 / 8187

页数：2