Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon

被引：0

作者：

Yue, GZ ^{[1
]}

Chen, LF ^{[1
]}

Wang, Q ^{[1
]}

Iwaniczko, E ^{[1
]}

Kong, GL ^{[1
]}

Baugh, J ^{[1
]}

Wu, Y ^{[1
]}

Han, DX ^{[1
]}

机构：

[1] Acad Sinica, Inst Semicond, Beijing 100083, Peoples R China

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-685

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from similar to 2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).

引用

页码：685 / 690

页数：6

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