A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source

被引:24
作者
Coen, Christopher T. [1 ]
Frounchi, Milad [2 ]
Lourenco, Nelson E. [1 ]
Cheon, Clifford D. Y. [2 ]
Williams, Wyman L. [1 ]
Cressler, John D. [2 ]
机构
[1] Georgia Tech Res Inst, Adv Concepts Lab, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
60; GHz; avalanche noise; calibration; microwave radiometer; noise source; SiGe heterojunction bipolar transistor (HBT); single-pole double-throw (SPDT) switch;
D O I
10.1109/LMWC.2020.2975735
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a novel implementation of a ${V}$ -band single-pole double-throw switch that facilitates the internal calibration of radiometers by integrating an ambient noise source and an avalanche noise source. The switch is implemented in a 0.13- $\mu \text{m}$ SiGe bipolar-CMOS (BiCMOS) process and uses a shunt topology with $\lambda $ /4 directional couplers that inject noise from the avalanche source. The avalanche source is implemented using the collector-base junction of a SiGe heterojunction bipolar transistor (HBT) and attains a measured excess noise ratio of 18.7 dB at 60 GHz. The switch achieves a midband insertion loss of 2.0 dB and an isolation of 22 dB at 60 GHz. An excess input-referred noise temperature of 620 K is added with the noise source ON. To the best of our knowledge, this is the first avalanche noise source using a diode-configured SiGe HBT and the first monolithic two-reference switch for calibrating millimeter-wave radiometers.
引用
收藏
页码:417 / 420
页数:4
相关论文
共 10 条
[1]   Avalanche Microwave Noise Sources in Commercial 90-nm CMOS Technology [J].
Alimenti, Federico ;
Tasselli, Gabriele ;
Botteron, Cyril ;
Farine, Pierre-Andre ;
Enz, Christian .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) :1409-1418
[2]   Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz [J].
Azevedo Goncalves, Joao Carlos ;
Ghanem, Haitham ;
Bouvot, Simon ;
Gloria, Daniel ;
Lepilliet, Sylvie ;
Ducournau, Guillaume ;
Gaquiere, Christophe ;
Danneville, Francois .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (09) :3732-3742
[3]   INTEGRATED SILICON-GERMANIUM ELECTRONICS FOR CUBESAT-BASED RADIOMETERS [J].
Coen, Christopher T. ;
Piepmeier, Jeffrey R. ;
Cressler, John D. .
2013 IEEE INTERNATIONAL GEOSCIENCE AND REMOTE SENSING SYMPOSIUM (IGARSS), 2013, :1286-1289
[4]  
Ehsan N, 2015, EUR MICROW CONF, P853, DOI 10.1109/EuMC.2015.7345898
[5]  
Frounchi M, 2018, 2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), P223, DOI 10.1109/BCICTS.2018.8550883
[6]  
Goncalves JCA, 2017, 2017 INTERNATIONAL CONFERENCE OF MICROELECTRONIC TEST STRUCTURES (ICMTS)
[7]   NOISE OF A SELF-SUSTAINING AVALANCHE DISCHARGE IN SILICON - STUDIES AT MICROWAVE FREQUENCIES [J].
HAITZ, RH ;
VOLTMER, RW .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) :3379-&
[8]   AVALANCHE NOISE FROM SCHOTTKY-BARRIER DIODES IN FREQUENCY-RANGE 75 - 115 GHZ [J].
KEEN, NJ ;
HAAS, RW ;
ZIMMERMANN, P .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (10) :843-844
[9]   On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs [J].
Schmid, Robert L. ;
Song, Peter ;
Coen, Christopher T. ;
Ulusoy, Ahmet Cagri ;
Cressler, John D. .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (11) :2755-2767
[10]   A Low-Loss 50-70 GHz SPDT Switch in 90 nm CMOS [J].
Uzunkol, Mehmet ;
Rebeiz, Gabriel M. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (10) :2003-2007