Solid polyelectrolyte-gated surface conductive diamond field effect transistors

被引:14
作者
Dankerl, M. [1 ]
Tosun, M.
Stutzmann, M.
Garrido, J. A.
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
OXIDE;
D O I
10.1063/1.3676662
中图分类号
O59 [应用物理学];
学科分类号
摘要
Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO4 electrolyte to replace aqueous electrolytes as a gate for surface-conductive diamond field-effect transistors (FET). The resulting transistor shows characteristics comparable to those of aqueous electrolyte-gated diamond FETs. We investigate the polyelectrolyte/diamond interface with impedance spectroscopy and cyclic voltammetry, showing the electrochemical stability of the interface and capacitive gating up to 100 Hz. Hall effect measurements on the polyelectrolyte-gated devices are compared to those with liquid gates. The solid and transparent polyelectrolyte gates promise further applications for surface-conductive diamond FETs. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676662]
引用
收藏
页数:3
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