Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

被引：13

作者：

Kamler, G

Borysiuk, J

Weyher, JL

Czernecki, R

Leszczynski, M

Grzegory, I

Porowski, S

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] Radboud Univ Nijmegen, IMM, NL-6525 ED Nijmegen, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 282卷 / 1-2期

关键词：

etching; planar defects; gallium nitride;

D O I：

10.1016/j.jcrysgro.2005.04.092

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two different etching techniques were used for the investigation of polarity inversion in the magnesium-doped MOVPE GaN layers deposited on GaN pressure grown substrates. Etching in KOH solution at 100 degrees C and in molten bases at 450 degrees C allowed us to determine precisely the regions of different polarity. Chemically active N-polar GaN areas were removed leaving Ga-polar material intact. The results were confirmed by the TEM examination. (c) 2005 Elsevier B.V. All rights reserved.

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页码：45 / 48

页数：4

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