Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

被引：21

作者：

Brodar, Tomislav ^{[1
]}

Capan, Ivana ^{[1
]}

Radulovic, Vladimir ^{[2
]}

Snoj, Luka ^{[2
]}

Pastuovic, Zeljko ^{[3
]}

Coutinho, Jose ^{[4
,5
]}

Ohshima, Takeshi ^{[6
]}

机构：

[1] Rudjer Boskovic Inst, Div Mat Phys, Bijenicka Cesta 54, Zagreb 10000, Croatia

[2] Jozef Stefan Inst, Reactor Phys Div, Jamova 39, Ljubljana 1000, Slovenia

[3] Australian Nucl Sci & Technol Org, Ctr Accelerator Sci, 1 New Illawarra Rd, Lucas Heights, NSW 2234, Australia

[4] Univ Aveiro, Dept Phys, Campus Santiago, P-3810193 Aveiro, Portugal

[5] Univ Aveiro, I3N, Campus Santiago, P-3810193 Aveiro, Portugal

[6] Natl Inst Quantum & Radiol Sci & Technol, Takasaki Adv Radiat Res Inst, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2018年 / 437卷

关键词：

Epitaxial n-type 4H-SiC; Laplace DLTS; Defects; Neutron irradiation; ELECTRON-IRRADIATION; SILICON-CARBIDE; LEVEL DEFECTS; TEMPERATURE; 4H; CENTERS;

D O I：

10.1016/j.nimb.2018.10.030

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper presents the characterization of the electrically active defects created by epithermal and fast neutrons in epitaxial n-type 4H-SiC material using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutron irradiation introduces additional simple defect complexes, with energy levels at E-c - 0.40 eV and E-c - 0.70 eV.

引用

页码：27 / 31

页数：5

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