Fatigue and data retention characteristics of single-grained Pb(Zr,Ti)O3 thin films

被引：0

作者：

Lee, JS ^{[1
]}

Park, JH ^{[1
]}

Yun, JI ^{[1
]}

Kim, CS ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2001年 / 39卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Fatigue and data retention characteristics of single-grained Pb(Zr,Ti)O-3 (PZT) thin films fabricated with a Pt/PZT/Pt structure by using the PZT seeding method were investigated. In the case of fatigue, there was no loss in the switched polarization up to 2 x 10(11) cycles when using a 1-MHz square-wave form at +/- 10 V and no data loss after 30000 s of memory retention at room temperature. From the activation energy measured at high temperatures, the time required for a 20 % loss in the remanent polarization was estimated to be 6.6 x 10(7) years at room temperature. In this study, we showed that when there was no grain boundary in the area measured, degradation, such as fatigue and retention. was not observed even with Pt electrodes.

引用

页码：184 / 188

页数：5

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