Study on MgO buffer in ZnO layers grown by plasma-assisted molecular beam epitaxy on Al2O3 (0001)

被引：29
作者：
Setiawan, A
Ko, HJ
Hong, SK
Chen, YF
Yao, TF
机构：
[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Korea Photon Technol Inst, Gwangju 500210, South Korea
[3] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[4] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
来源：
THIN SOLID FILMS | 2003年 / 445卷 / 02期
关键词：
ZnO; molecular beam epitaxy; MgO buffer; annealing;
D O I：
10.1016/S0040-6090(03)01163-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated effects of MgO buffer layers and its annealing on the structural quality of ZnO layers grown on Al2O3(0001) by plasma assisted molecular beam epitaxy (P-MBE). It was found that surface morphology and crystalline quality of ZnO layers were improved by employing thin MgO buffer layers. Furthermore, annealing of the MgO buffer at high temperatures enhanced the surface migration of adatoms, leading to the formation of larger terraces and smoother surface morphology. We speculate that the relaxation of strain in the MgO buffer contributes to lowering of the surface energy. The dislocation density of ZnO layers was also reduced from 5.3 X 10(9) cm(-2) to 1.9 X 10(9) cm(-2) by annealing a low temperature (LT) MgO buffer. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：213 / 218
页数：6
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