Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes

被引：17

作者：

Ebrish, M. A. ^{[1
]}

Shao, H. ^{[1
]}

Koester, S. J. ^{[1
]}

机构：

[1] Univ Minnesota Twin Cities, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期

基金：

美国国家科学基金会;

关键词：

GAS;

D O I：

10.1063/1.3698394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The operation of multi-finger graphene quantum capacitance varactors fabricated using a planarized local bottom gate electrode, HfO2 gate dielectric, and large-area graphene is described. As a function of the gate bias, the devices show a room-temperature capacitance tuning range of 1.22-1 over a voltage range of +/-2V. An excellent theoretical fit of the temperature-dependent capacitance-voltage characteristics is obtained when random potential fluctuations with standard deviation of 65mV are included. The results represent a first step in realizing graphene quantum capacitance varactors for wireless sensing applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698394]

引用

页数：4

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