Broadband terahertz study of excitonic resonances in the high-density regime in GaAs/AlxGa1-xAs quantum wells -: art. no. 161314

被引：70

作者：

Huber, R ^{[1
]}

Kaindl, RA

Schmid, BA

Chemla, DS

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.72.161314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first terahertz study of the intraexcitonic 1s-2p transition at high excitation densities in GaAs/AlxGa1-xAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing density, after ultrafast photoexcitation at the near-infrared exciton line. Densities of excitons and unbound electron-hole pairs are followed quantitatively using a model of the composite terahertz dielectric response. Comparison with near-infrared absorption changes reveals a significantly enhanced energy shift and broadening of the intraexcitonic resonance.

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