Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

被引：21

作者：

Dolgov, A. ^{[1
]}

Yakushev, O. ^{[2
,3
]}

Abrikosov, A. ^{[2
,4
]}

Snegirev, E. ^{[2
,3
]}

Krivtsun, V. M. ^{[2
,3
]}

Lee, C. J. ^{[1
]}

Bijkerk, F. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] EUVLabs Ltd, RnD ISAN Ltd, Troitsk, Russia

[3] RAS, Inst Spect, Atom Spect Dept, Moscow 117901, Russia

[4] Moscow Inst Phys & Technol, Moscow, Russia

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 2015年 / 24卷 / 03期

关键词：

extreme ultraviolet; EUV source; EUV-induced plasma; plasma probe; MULTILAYER MIRRORS; LITHOGRAPHY; IRRADIATION;

D O I：

10.1088/0963-0252/24/3/035003

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed.

引用

页数：7

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