Nanoscale capacitance-voltage characterization of two-dimensional electron gas in AlGaN/GaN heterostructures

被引：5

作者：

Koley, G ^{[1
]}

Lakshmanan, L

Tipirneni, N

Gaevski, M

Koudymov, A

Simin, G

Cha, HY

Spencer, MG

Khan, A

机构：

[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 42-45期

关键词：

AlGaN/GaN heterostructures; two-dimensional electron gas; capacitance-voltage measurements; scanning probe microscopy; nanoscale;

D O I：

10.1143/JJAP.44.L1348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple technique for quantitative nanoscale capacitance-voltage (C-V) measurements has been developed and used to characterize the two-dimensional electron gas (2DEG) at the interface of AlGaN/GaN heterostructures. The measurements indicate change in confinement of the 2DEG at the AlGaN/GaN interface depending on the direction of the dc voltage sweep during C-V measurements, indicating surface state charging and discharging. Under UV illumination, the 2DEG increased significantly as inferred from the increase in threshold voltage of the nanoscale C-V scans, while no change in 2DEG confinement was observed.

引用

页码：L1348 / L1351

页数：4

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