Room temperature synthesis of nanocrystalline silicon by aluminium induced crystallization for solar cell applications

被引：8

作者：

Bu, Ian Y. Y. ^{[1
]}

机构：

[1] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 81157, Taiwan

来源：

VACUUM | 2011年 / 86卷 / 01期

关键词：

Low temperature; Plastic compatible; Nanocrystalline silicon; Solar cells; METAL-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE-SILICON; AMORPHOUS-SILICON; HYDROGEN DILUTION; DEPOSITION; SIZE; CVD;

D O I：

10.1016/j.vacuum.2011.05.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this study is to synthesis large area, plastic compatible of p-type nanocrystalline silicon through conventional sputter system. The growth of and p-type doping of nanocrystalline silicon onto plastic substrates using D.C. magnetron sputtering was investigated. The film properties were examined by Raman spectroscopy, X-ray Diffraction, scanning electron microscopy and energy dispersive spectrometry. Nanocrystalline silicon was achieved with careful control of ion bombardment energy. Through a narrow experimental, window room temperature, nanocrystalline silicon can be synthesised on aluminium. It is believed the aluminium reduces the required energy for crystallite nucleation. PN junction was formed through sputtering of Al/Al-Si/n-type Si/AZO structure. The I-V characteristic showed good rectifying behaviour and confirms p-type doping via aluminium induced crystallization. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：106 / 110

页数：5

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