Effect of As doping on the photoluminescence of nanocrystalline 74Ge embedded in SiO2 matrix

被引：16

作者：

Dun, Shaobo ^{[1
,2
]}

Lu, Tiecheng ^{[1
,2
]}

Hu, Youwen ^{[1
,2
]}

Hu, Qiang ^{[1
,2
]}

Yu, Liuqi ^{[1
,2
]}

Li, Zheng ^{[1
,2
]}

Huang, Ningkang ^{[1
,2
]}

Zhang, Songbao ^{[3
]}

Tang, Bin ^{[3
]}

Dai, Junlong ^{[3
]}

Resnick, Lev ^{[4
,5
]}

Shlimak, Issai ^{[4
,5
]}

机构：

[1] Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China

[2] Sichuan Univ, Dept Phys, Minist Educ, Chengdu 610064, Peoples R China

[3] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China

[4] Bar Ilan Univ, Dept Phys, Minerva Ctr, IL-52900 Ramat Gan, Israel

[5] Bar Ilan Univ, Dept Phys, Jack & Pearl Resnick Inst Adv Technol, IL-52900 Ramat Gan, Israel

来源：

JOURNAL OF LUMINESCENCE | 2008年 / 128卷 / 08期

关键词：

photoluminescence; quenching; nanocrystals; doping;

D O I：

10.1016/j.jlumin.2008.01.005

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Samples of nanocrystalline Ge-74 embedded in amorphous SiO2 film were prepared by Ge-74 ion implantation and subsequent primary thermal annealing. These samples were irradiated by neutron flux in a nuclear reactor then the second annealing followed. Irradiation with thermal neutrons leads to doping of nanocrystalline Ge-74 with As impurities due to nuclear transmutation of isotope Ge-74 into As-75. Transmission electron microscope, X-ray fluorescence, X-ray photoelectron spectroscopy, laser Raman scattering and photoluminescence of the obtained samples were measured. It was observed that with the increase in As-donors concentration, photoluminescence intensity first increased but then significantly decreased. An explanatory model of this non-monotonic behavior was discussed. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1363 / 1368

页数：6

共 24 条

[1] Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots [J].

Bottani, CE ;

Mantini, C ;

Milani, P ;

Manfredini, M ;

Stella, A ;

Tognini, P ;

Cheyssac, P ;

Kofman, R .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2409-2411

[2] AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES [J].

DELERUE, C ;

LANNOO, M ;

ALLAN, G ;

MARTIN, E ;

MIHALCESCU, I ;

VIAL, JC ;

ROMESTAIN, R ;

MULLER, F ;

BSIESY, A .

PHYSICAL REVIEW LETTERS, 1995, 75 (11) :2228-2231

[3] Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition [J].

Dutta, AK .

APPLIED PHYSICS LETTERS, 1996, 68 (09) :1189-1191

[4] Doping semiconductor nanocrystals [J].

Erwin, SC ;

Zu, LJ ;

Haftel, MI ;

Efros, AL ;

Kennedy, TA ;

Norris, DJ .

NATURE, 2005, 436 (7047) :91-94

[5] Photoluminescence from B-doped Si nanocrystals [J].

Fujii, M ;

Hayashi, S ;

Yamamoto, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :7953-7957

[6] Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping:: An electron spin resonance study [J].

Fujii, M ;

Mimura, A ;

Hayashi, S ;

Yamamoto, K ;

Urakawa, C ;

Ohta, H .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1855-1857

[7] Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2 [J].

Giri, PK ;

Kesavamoorthy, R ;

Panigrahi, BK ;

Nair, KGM .

SOLID STATE COMMUNICATIONS, 2005, 133 (04) :229-234

[8] ISOTOPICALLY ENGINEERED SEMICONDUCTORS [J].

HALLER, EE .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :2857-2878

[9] Implantation of P ions in SiO2 layers with embedded Si nanocrystals [J].

Kachurin, GA ;

Cherkova, SG ;

Volodin, VA ;

Kesler, VG ;

Gutakovsky, AK ;

Cherkov, AG ;

Bublikov, A ;

Tetelbaum, DI .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (3-4) :497-504

[10] Theory of radiative and nonradiative transitions for semiconductor nanocrystals [J].

Lannoo, M ;

Delerue, C ;

Allan, G .

JOURNAL OF LUMINESCENCE, 1996, 70 :170-184

← 1 2 3 →