Surface Control of Doping in Self-Doped Nanocrystals

被引:66
|
作者
Robin, Adrien [1 ,2 ]
Livache, Clement [1 ,3 ]
Ithurria, Sandrine [1 ]
Lacaze, Emmanuelle [3 ]
Dubertret, Benoit [1 ]
Lhuillier, Emmanuel [3 ]
机构
[1] Univ Paris 06, Sorbonne Univ, PSL Res Univ, Lab Phys & Etud Mat,ESPCI ParisTech,CNRS, 10 Rue Vauquelin, F-75005 Paris, France
[2] Biocitech, Nexdot, 102 Ave Gaston Roussel, F-93230 Romainville, France
[3] Univ Paris 06, Sorbonne Univ, Inst NanoSci Paris, CNRS,UMR 7588, 4 Pl Jussieu, F-75005 Paris, France
关键词
HgSe; self-doping; colloidal quantum dot; electrolyte gating; photoresponse; infrared; COLLOIDAL QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; LIGAND-EXCHANGE; WORK FUNCTION; THIN-FILMS; TRANSISTORS; PHOTODETECTORS; ENERGIES;
D O I
10.1021/acsami.6b09530
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. In this paper, we demonstrate that a fine control of the doping level between 0.1 and 2 electrons per dot is obtained through ligand exchange. The latter affects not only the interparticle coupling but also their optical properties because of the band-shift resulting from the presence of surface dipoles. We demonstrate that self-doping is a bulk process and that surface dipoles can control its magnitude. We additionally propose a model to quantify the dipole involved with each ligand. We eventually use the ligand design rule previously evidenced to build a near-infrared photodetector on a soft and transparent substrate. The latter significantly improves the performance compared to previously reported colloidal quantum dot-based photodetectors on plastic substrates operated in the telecom wavelength range.
引用
收藏
页码:27122 / 27128
页数:7
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