High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films

被引：5

作者：

Bera, LK ^{[1
]}

Choi, WK

Tan, CS

Samanta, SK

Maiti, CK

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Microelect Lab, Singapore 117576, Singapore

[2] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 08期

关键词：

gate oxide integrity; oxide reliability; SiGe oxide;

D O I：

10.1109/55.936352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal stability and strain relaxation temperature of strained Si0.91Ge0.09 layer has been investigated using double crystal x-ray diffraction (DCXRD), High quality gate oxynitride layers rapid thermally grown on strained Si0.91Ge0.09 using N2O and split N2O cycle technique below strained relaxed temperature is reported, A positive fixed oxide charge density was observed for N2O and split-N2O grown films. The O-2 grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N2O or split-N2O grown films were achieved compared to pure O-2 grown films.

引用

页码：387 / 389

页数：3

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