Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

被引：42

作者：

Chang, Kow-Ming ^{[1
,2
,3
]}

Huang, Sung-Hung ^{[1
,2
]}

Wu, Chin-Jyi ^{[4
]}

Lin, Wei-Li ^{[1
,2
]}

Chen, Wei-Chiang ^{[1
,2
]}

Chi, Chia-Wei ^{[1
,2
]}

Lin, Je-Wei ^{[4
]}

Chang, Chia-Chiang ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] I Shou Univ, Coll Elect & Informat Engn, Kaohsiung 84001, Taiwan

[4] Ind Technol Res Inst, Mech & Syst Res Labs, Hsinchu 31040, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 15期

关键词：

Transparent conductive oxide; Atmospheric-pressure plasma; Indium-doped zinc oxide; Zinc nitrate; Indium nitrate; THIN-FILMS; ELECTRICAL-PROPERTIES; ZNO; DEPOSITION;

D O I：

10.1016/j.tsf.2011.01.156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atmospheric-pressure plasma processing has attracted much interest for industrial applications due to its low cost, high processing speed and simple system. In this study, atmospheric-pressure plasma jet technique was developed to deposit indium-doped zinc oxide films. The inorganic metal salts of zinc nitrate and indium nitrate were used as precursors for Zn ions and In ions, respectively. The effect of different indium doping concentration on the morphological, structural, electrical and optical properties of the films was investigated. Grazing incidence X-ray diffraction results show that the deposited films with a preferred (002) orientation. The lowest resistivity of 1.8 x 10(-3) Omega cm was achieved with the 8 at.% indium-doped solution at the substrate temperature of 200 degrees C in open air, and average transmittance in the visible region was more than 80%. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5114 / 5117

页数：4

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