Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy

被引：7

作者：

Jo, Masafumi ^{[1
]}

Keizer, Joris G. ^{[2
]}

Mano, Takaaki ^{[1
]}

Koenraad, Paul M. ^{[2
]}

Sakoda, Kazuaki ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 05期

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; SURFACES; RECONSTRUCTION; TRANSPORT; LASERS;

D O I：

10.1143/APEX.4.055501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-density quantum dots coalesce to form wires oriented along the [(2) over bar 33] direction as a result of atom diffusion triggered by thermal annealing. Luminescence from the QWRs is significantly polarized parallel to the wire direction, which would result in higher gain in lasers that use cleaved (01 (1) over bar) surfaces as Fabry-Perot mirrors. Lasing is obtained for a GaAs/AlGaAs QWR laser diode with fivefold-stacked QWR layers under pulsed operation at a low temperature. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 26 条

[1] Observation of Ga droplet formation on (311)A and (511)A GaAs surfaces [J].

AbuWaar, Ziad Y. ;

Wang, Zhiming M. ;

Lee, Jihoon H. ;

Salamo, Gregory J. .

NANOTECHNOLOGY, 2006, 17 (16) :4037-4040

[2] Molecular beam epitaxial growth of AlGaAs/InGaAs/GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties [J].

Akiyama, Y ;

Kawazu, T ;

Noda, T ;

Koshiba, S ;

Torii, K ;

Sakaki, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :1162-1165

[3]

ARAKAWA Y, 1982, APPL PHYS LETT, V40, P40

[4] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[5] Droplet epitaxy of GaAs quantum dots on (001), vicinal (001), (110), and (311)A GaAs [J].

Heyn, Ch. ;

Stemmann, A. ;

Schramm, A. ;

Hansen, W. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :1825-1827

[6] Highly uniform and high-density GaAs/(GaAs)(4)(AlAs)(2) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy [J].

Higashiwaki, M ;

Yamamoto, M ;

Shimomura, S ;

Hiyamizu, S .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2005-2007

[7] Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy [J].

Jo, Masafumi ;

Mano, Takaaki ;

Sakoda, Kazuaki .

APPLIED PHYSICS EXPRESS, 2010, 3 (04)

[8] STIMULATED-EMISSION IN SEMICONDUCTOR QUANTUM WIRE HETEROSTRUCTURES [J].

KAPON, E ;

HWANG, DM ;

BHAT, R .

PHYSICAL REVIEW LETTERS, 1989, 63 (04) :430-433

[9] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].

KOGUCHI, N ;

TAKAHASHI, S ;

CHIKYOW, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692

[10] GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS [J].

KOGUCHI, N ;

ISHIGE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (5A) :2052-2058

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