4H-SiC MESFET's with 42 GHz f(max)

被引：66

作者：

Sriram, S ^{[1
]}

Augustine, G ^{[1
]}

Burk, AA ^{[1
]}

Glass, RC ^{[1
]}

Hobgood, HM ^{[1
]}

Orphanos, PA ^{[1
]}

Rowland, LB ^{[1
]}

Smith, TJ ^{[1
]}

Brandt, CD ^{[1
]}

Driver, MC ^{[1
]}

Hopkins, RH ^{[1
]}

机构：

[1] WESTINGHOUSE SCI & TECHNOL CTR,PITTSBURGH,PA 15235

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 07期

关键词：

D O I：

10.1109/55.506370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time the development of state-of-the art SiC MESFET's on high-resistivity 4H-SiC substrates, 0.5 mu m gate MESFET's in this material show a new record high f(max) of 42 GKz and RF gain of 5.1 dB at 20 GHz. These devices also show simultaneously high drain current, and gate-drain breakdown voltage of 500 mA/mm, and 100 V, respectively showing their potential for RF power applications.

引用

页码：369 / 371

页数：3

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