Preparation of high-quality hexaferrite thick films by an improved liquid phase epitaxy deposition technique

被引：12

作者：

Yoon, SD ^{[1
]}

Vittoria, C ^{[1
]}

机构：

[1] Northeastern Univ, Dept Elect Comp Engn, Boston, MA 02115 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2003年 / 39卷 / 05期

关键词：

ferrimagnetic resoance (FMR); hexaferrite; liquid phase epitaxy growth; thick film;

D O I：

10.1109/TMAG.2003.816044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the deposition of thick and high-quality films of BaM on (111) gadolinium gallium garnet (GGG) and m-plane, (1100) or 1010), sapphire (Al2O3) substrates. The deposition rate is sufficiently high to allow for large batch production. The total thickness ranged from 50 to 200 mum for 2 h of the liquid phase epitaxy deposition. Therefore, the growth rate of the films ranged from similar to25 to similar to100 mum/h. In previous work, growth rates in BaM films were quite small. Equally important, the ferrimagnetic resonance (FMR) linewidth (DeltaH) was similar to0.068 kOe at 58 GHz for the BaM films on (111) GGG and similar to0.08 kOe at 59.9 GHz for the BaM film on m-plane sapphire substrates. The FMR linewidth films of thick BaM films deposited by pulsed laser deposition in earlier work ranged from 0.5 to 1.2 kOe.

引用

页码：3163 / 3165

页数：3

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