Narrow-linewidth thermally tuned multi-channel interference widely tunable semiconductor laser with thermal tuning power below 50 mW

被引:18
作者
Chen, Quanan
Jiang, Chun
Wang, Kuankuan
Zhang, Miao
Ma, Xiang
Liu, Ye
Lu, Qiaoyin
Guo, Weihua [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Semiconductor alloys - III-V semiconductors - Indium alloys - Silicon alloys - Arsenic compounds - Gallium alloys - Heating equipment - Quantum well lasers;
D O I
10.1364/PRJ.380002
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A thermally tuned multi-channel interference widely tunable semiconductor laser is designed and demonstrated, for the first time to our knowledge, that realizes a tuning range of more than 45 nm, side-mode suppression ratios up to 56 dB, and Lorentzian linewidth below 160 kHz. AlGalnAs multiple quantum wells (MQWs) were used to reduce linewidth, which have a lower linewidth enhancement factor compared with InGaAsP MQWs. To decrease the power consumption of micro-heaters, air gaps were fabricated below the arm phase sections. For a 75 mu m long suspended thermal tuning waveguide, about 6.3 mW micro-heater tuning power is needed for a 2 pi round-trip phase change. Total micro-heater tuning power required is less than 50 mW across the whole tuning range, which is lower than that of the reported thermally tuned tunable semiconductor lasers. (C) 2020 Chinese Laser Press
引用
收藏
页码:671 / 676
页数:6
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