First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

被引：10

作者：

Hoel, V. ^{[1
]}

Defrance, N. ^{[1
]}

De Jaeger, J. C. ^{[1
]}

Gerard, H. ^{[1
]}

Gaquiere, C. ^{[1
]}

Lahreche, H. ^{[2
]}

Langer, R. ^{[2
]}

Wilk, A. ^{[2
]}

Lijadi, M. ^{[2
]}

Delage, S. ^{[3
]}

机构：

[1] USTL, CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[2] Picogiga Int, F-91971 Courtaboeuf 7, France

[3] ATL III V Lab, F-91461 Marcoussis, France

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 03期

关键词：

D O I：

10.1049/el:20083258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first results obtained from AlGaN/GaN HEMT devices on MBE epitaxial structures grown on 'composite' substrates are presented. These substrates are based on innovative structures in which a thin Si single crystal layer is transferred on top of a thick polycrystalline SiC wafer. The fabrication of the transistors is based on a process. flow close to those used on epitaxy on Si bulk substrates. The results show the capabilities of such composite devices, providing HEMT devices for microwave power applications.

引用

页码：238 / 239

页数：2

共 5 条

[1] Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate [J].

Ducatteau, D ;

Minko, A ;

Hoël, V ;

Morvan, E ;

Delos, E ;

Grimbert, B ;

Lahreche, H ;

Bove, P ;

Gaquière, C ;

De Jaeger, JC ;

Delage, S .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (01) :7-9

[2] AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz [J].

Dumka, DC ;

Lee, C ;

Tserng, HQ ;

Saunier, P ;

Kumar, M .

ELECTRONICS LETTERS, 2004, 40 (16) :1023-1024

[3]

LAHRECHE H, 2007, WOCSDICE C VEN IT

[4]

LAHRECHE H, 2005, GAAS C PAR FRANC, P369

[5]

MORVAN E, 2004, GAAS C AMST NETH

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