Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN

被引：22

作者：

Wang, Jie ^{[1
]}

Wang, Tongqing ^{[1
]}

Pan, Guoshun ^{[1
]}

Lu, Xinchun ^{[1
]}

机构：

[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2016年 / 378卷

关键词：

GaN; Chemical mechanical polishing; Catalyst concentration; Photocatalytic oxidation; Ultraviolet intensity; GALLIUM NITRIDE; SAPPHIRE; PLANARIZATION; CMP;

D O I：

10.1016/j.apsusc.2016.03.208

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing (CMP) of GaN were deeply investigated in this paper. Working as an ideal homogeneous substrate material in LED industry, GaN ought to be equipped with a smooth and flat surface. Taking the strong chemical stability of GaN into account, photocatalytic oxidation technology was adopted in GaN CMP process to realize efficient removal. It was found that, because of the improved reaction rate of photocatalytic oxidation, GaN material removal rate (MRR) increases by a certain extent with catalyst concentration increasing. Cross single line analysis on the surface after polishing by Phase Shift MicroXAM-3D was carried out to prove the better removal effect with higher catalyst concentration. Ultraviolet intensity field in H2O2-SiO2-based polishing system was established and simulated, revealing the variation trend of ultraviolet intensity around the outlet of the slurry. It could be concluded that, owing to the higher planarization efficiency and lower energy damage, the UV lamp of 125 W is the most appropriate lamp in this system. Based on the analysis, defects removal model of this work was proposed to describe the effects of higher catalyst concentration and higher power of UV lamp. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：130 / 135

页数：6

共 28 条

[1] Surface Planarization of GaN-on-Sapphire Template by Chemical Mechanical Polishing for Subsequent GaN Homoepitaxy [J].

Aida, Hideo ;

Kim, Seong-woo ;

Suzuki, Toshimasa ;

Koyama, Koji ;

Aota, Natsuko ;

Doi, Toshiro ;

Yamazaki, Tsutomu .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (05) :P163-P168

[2] Evaluation of subsurface damage in GaN substrate induced by mechanical polishing with diamond abrasives [J].

Aida, Hideo ;

Takeda, Hidetoshi ;

Kim, Seong-Woo ;

Aota, Natsuko ;

Koyama, Koji ;

Yamazaki, Tsutomu ;

Doi, Toshiro .

APPLIED SURFACE SCIENCE, 2014, 292 :531-536

[3] Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials [J].

Aida, Hideo ;

Doi, Toshiro ;

Takeda, Hidetoshi ;

Katakura, Haruji ;

Kim, Seong-Woo ;

Koyama, Koji ;

Yamazaki, Tsutomu ;

Uneda, Michio .

CURRENT APPLIED PHYSICS, 2012, 12 :S41-S46

[4] Chemical Mechanical Polishing of Gallium Nitride with Colloidal Silica [J].

Aida, Hideo ;

Takeda, Hidetoshi ;

Koyama, Koji ;

Katakura, Haruji ;

Sunakawa, Kazuhiko ;

Doi, Toshiro .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (12) :H1206-H1212

[5] Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing [J].

Arjunan, Arul Chakkaravarthi ;

Singh, Deepika ;

Wang, H. T. ;

Ren, F. ;

Kumar, Purushottam ;

Singh, R. K. ;

Pearton, S. J. .

APPLIED SURFACE SCIENCE, 2008, 255 (05) :3085-3089

[6] Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing [J].

Deng, Hui ;

Endo, Katsuyoshi ;

Yamamura, Kazuya .

APPLIED PHYSICS LETTERS, 2015, 107 (05)

[7] Investigation on the surface characterization of Ga-faced GaN after chemical-mechanical polishing [J].

Gong, Hua ;

Pan, Guoshun ;

Zhou, Yan ;

Shi, Xiaolei ;

Zou, Chunli ;

Zhang, Suman .

APPLIED SURFACE SCIENCE, 2015, 338 :85-91

[8] Surface preparation of substrates from bulk GaN crystals [J].

Hanser, Drew ;

Tutor, Mike ;

Preble, Ed ;

Williams, Mark ;

Xu, Xueping ;

Tsvetkov, Denis ;

Liu, Lianghong .

JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :372-376

[9] Chemical mechanical polishing of GaN [J].

Hayashi, S. ;

Koga, T. ;

Goorsky, M. S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) :H113-H116

[10] Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method [J].

Kim, HM ;

Oh, JE ;

Kang, TW .

MATERIALS LETTERS, 2001, 47 (4-5) :276-280

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